Diodes

  • Inroduction
  • Products
  • Supplier Profile

Discrete: Diodes

Shindengen is a leading company in diodes, offers Products for wide-ranging needs, from AC input section bridge diodes to secondary-side rectifier section high-speed diodes. Diodes are distinguished by their high durability, high reliability and ultra-low loss, thanks to the unique design, process and production technologies.

As KAGA FEI Europe, we are your reliable business partner, your value-added distributor for ShinDengen diodes. 

General Rectifying Diodes

General rectifying diodes are high-voltage PN-junction rectifying elements. The chip structure stands out for its heat and humidity resistance, using own chemically and physically stable glass passivation. The voltage goes up to 800V and output currents range from 1A to 30A. Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.

Schottky Barrier Diodes

These diodes use the barriers created from the junction of metal and semiconductor. They make optimal high-speed, low-VF diodes, with lower forward startup voltage than a PN junction and extremely fast switching.Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.

Fast Recovery Diodes

These diodes use the barriers created from the junction of metal and semiconductor. They make optimal high-speed, low-VF diodes, with lower forward startup voltage than a PN junction and extremely fast switching.Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.

Company Overview

  • Company name: Shindengen Electric Manufacturing Co., Ltd.
  • Foundation: 1949
  • Main Office: Ohtemachi, Chiyoda-ku, Tokyo, Japan
  • Products: power semiconductors, power supply and car electronics products
  • Company Homepage: http://www.shindengen.co.jp/top_e/index.html

Shindengen expansive product line of semiconductors includes general rectifier diodes used for switching power supplies, world-leading performance bridge diodes, MOSFETs and high-speed rectifier diodes. Shindengen also maintains a large market share in surge protection devices appropriate for induced-surge and over-voltage protection.

Power MOSFETs

  • Introduction
  • Products
  • Supplier Profile

Discrete: Power MOSFETs

Shindengen’s experience as a power semiconductor manufacturer is utilized in their MOSFETs. Low input capacitance and high durability make them ideal for use in SMPS applications.

EETMOS® Series SMD (Surface Mount Device):

PackageID (A)VDSS(V): 40VDSS(V): 50,55VDSS(V): 60VDSS(V): 100VDSS(V): 120150
LA (SC-111BC Similar)13P13LA10EL
FB (TO-252AA)20P20B12SN *N
FB (TO-252AA)25P25B6EB
FB (TO-252AA)26P26B10SL *N
P26B10SN *N
FB (TO-252AA)30P30B10EL
FB (TO-252AA)60P60B4ELP60B6EL
P60B6EN
P60B6SN *N
FE (SC-63)26P26FE10SLK *N
FG32P32FG15SL
FG80P80FG6EA
FG85P85FG6EA
P85FG6EAL
FG90P90FG5R5SL
FG94P94FG5R5SL
FH (TO-263AB-1)80P80FH5ENK
FH (TO-263AB-1)100P100FH4ENK
FP126P126FP10SNK

EETMOS® Series THD (Through Hole Device):

PackageID (A)VDSS(V): 50VDSS(V): 60VDSS(V): 75VDSS(V): 100VDSS(V): 120
FTO-220AG (SC-91)22P22F10SN *N
FTO-220AG (SC-91)32P32F12SN *N
FTO-220AG (SC-91)34P34F6EL
FTO-220AG (SC-91)40P40F10SN *NP40F12SN *N
FTO-220AG (SC-91)42P42F6EN
FTO-220AG (SC-91)50P50F10SN *N
FTO-220AG (SC-91)55P55F6EN
FTO-220AG (SC-91)66P66F7R5SN *N
FTO-220AG (SC-91)70P70F5ENP70F7R5EN
FTO-220AG (SC-91)82P82F7R5SN *N
FTO-220AG (SC-91)86P86F6SN *N
FA (SC-46)100P100FA7R5EN *N

Hi-PotMOS® Series SMD (Surface Mount Device):

PackageID (A)VDSS(V): 250280300VDSS(V): 400VDSS(V): 500VDSS(V): 525VDSS(V): 600
FB (TO-252AA)0.5P0R5B60HP2
FB (TO-252AA)1P1B52HP2
FB (TO-252AA)2P2B60HP2F *N
FB (TO-252AA)2.5P2R5B52HP2F
FB (TO-252AA)*N
FB (TO-252AA)3P3B28HP2
FB (TO-252AA)4P4B40HP2
FB (TO-252AA)5P5B52HP2
FB (TO-252AA)6P6B28HP2P6B40HP2P6B52HP2
FB (TO-252AA)8P8B28HP2
P8B30HP2 *N
FB (TO-252AA)9P9B40HP2
FB (TO-252AA)10P10B28HP2
FE (SC-63)2P2FE60VX5K *N
FE (SC-63)6P6FE25VX5K *N
FH (TO-263AB-1)7P7FH60HP2 *N
FH (TO-263AB-1)15P15FH60HP2 *N
FH (TO-263AB-1)20P20FH50HP2 *N
FH (TO-263AB-1)36P36FH28HP2 *N

Hi-PotMOS® Series THD (Through Hole Device):

PackageID (A)VDSS(V): 280VDSS(V): 500VDSS(V): 600
FTO-220AG (SC-91) 3P3F60HP2
FTO-220AG (SC-91) 4P4F60HP2
FTO-220AG (SC-91) 5P5F50HP2
P5F50HP2F *N
P5F60HP2
FTO-220AG (SC-91) 6P6F50HP2
FTO-220AG (SC-91) 7P7F60HP2
FTO-220AG (SC-91) 8P8F28HP2P8F50HP2
FTO-220AG (SC-91) 10P10F50HP2P10F60HP2
FTO-220AG (SC-91) 12P12F60HP2
FTO-220AG (SC-91) 13P13F28HP2P13F50HP2
FTO-220AG (SC-91) 15P15F50HP2P15F60HP2
P15F60HP2F *N
FTO-220AG (SC-91) 17P17F28HP2
FTO-220AG (SC-91) 20P20F50HP2
FTO-220AG (SC-91) 21P21F28HP2
FTO-220AG (SC-91) 26P26F28HP2
FTO-220AG (SC-91) 36P36F28HP2
MTO-3P (TO-247AD)85P85W28HP2F *N

*EETMOS® and Hi-PotMOS®  are registered trademarks of Shindengen.
*N: New

Datasheets are available on demand. Please contact us for more information at Shindengen@eu.kagafei.com

Company Overview

  • Company name: Shindengen Electric Manufacturing Co., Ltd.
  • Foundation: 1949
  • Main Office: Ohtemachi, Chiyoda-ku, Tokyo, Japan
  • Products: power semiconductors, power supply and car electronics products
  • Company Homepage: http://www.shindengen.co.jp/top_e/index.html

Shindengen expansive product line of semiconductors includes general rectifier diodes used for switching power supplies, world-leading performance bridge diodes, MOSFETs and high-speed rectifier diodes. Shindengen also maintains a large market share in surge protection devices appropriate for induced-surge and over-voltage protection.

GaN

  • Introduction
  • Products
  • Technology
  • Applications
  • Supplier Profile

Discrete: GaN

Over the last several years, GaN (Gallium Nitride) semiconductors have emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems – ranging from ultra-small adapters, high-power-density PCs, server and telecom power supplies, to highly efficient PV inverters and motion control systems.

From material technology and device fabrication to circuit design and package assembly, Transphorm designs and delivers its power conversion devices to meet the needs of global customers, helping them scale quickly and save money. By creating an ecosystem of electrical systems manufacturers powered by Transphorm, the company accelerates the adoption of application-specific power modules and paves the way for the next generation of electrical systems designed for optimal efficiency.

Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.

GaN Products

Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.

HEMTs (High Electron Mobility Transistors)

Part
Number
Package Voltage
(V)
Current
(A)
Ron
Max
(mOhm)
Description
TPH3206LSBPQFN8865016180Not recommended
for new designs
TPH3206LDGBPQFN8865016180Not recommended
for new designs
TPH3206PSBTO-22065016180GaN HEMT, normally-off, source tab
TPH3208LSGPQFN8865020130Not recommended
for new designs
TPH3208LDGPQFN8865020130Not recommended
for new designs
TPH3208PSTO-22065020130GaN HEMT, normally-off, source tab
TPH3212PSTO-2206502785GaN HEMT, normally-off, source tab
TP65H050WSTO-2476503460GaN HEMT, normally-off, source tab
TP65H035WSTO-24765046.541GaN HEMT, normally-off, source tab
TP90H180PSTO-22090015205GaN HEMT, normally-off, source tab

For Datasheets, please contact us at Transphorm@eu.kagafei.com

Demo Boards

Part NumberTopologyPower, FrequencyFeatured Device
TDINV3000W050-KITInverter3000W, 50~150kHzTP65H050WS
TDTTP2500P100-KITTotem-pole PFC2500W, 100kHzTPH3212PS
TDTTP4000W066B-KITTotem-pole PFC4000W, 66kHzTP65H035WS
TDINV1000P100-KITInverter1000W, 50~150kHzTPH3206PSB
TDINV3500P100-KITInverter3500W, 50~150kHzTP90H180PS
TDHBG2500P100-KITHalf-bridge synchronous buck or boost2500W, 50-300kHzTPH3212PS

For Datasheets, please contact us at Transphorm@eu.kagafei.com

Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.

Technology

Normally-off/Cascode – Normally-off devices are considered safer than normally-on devices. Transphorm pairs it’s normally-on, high-voltage GaN FET with a normally-off, low-voltage Si MOSFET. This creates a hybrid device that is normally-off but still compatible with Si drivers for added ease of use. This results in an overall fast-switching device with low conduction, switching and output losses. One important advantage of a Cascode switch is that no special driver is required.

VGS for fully on (V)

Max. VGS rating (V)

Safety Margin (V)

Transphorm Cascode

5

18

13

E-mode A

7

10

3

E-mode B

6

8

2

E-mode C

5

6

1

GaN has changed the world with high brightness LEDs and high power RF devices and now it expands to power applications. GaN offers higher performance and GaN epitaxial material is scalable to 6inch and 8inch Silicon substrates for a low cost platform.

Due to the extremely high mobility of GaN material, the technology lends itself to operate at higher switching frequencies and higher speeds leading to smaller size and lower weight power converter solutions. This in turn allows for smaller inductors, transformers, capacitors, heat sinks, PCBs and boxes/enclosures. Combined with increased efficiency end lower power losses results in a higher performance and cost reduced system compared to Silicon solutions.

For more information, please visit www.transphormusa.com/technology

Power supplies

High-density power supplies for PCs, servers and telecom equipment in the 200W to 5000W power range are addressed by compact power supplies and adapters utilizing Transphorm’s Gallium Nitride (GaN) devices. With Transphorm GaN-on-Silicon High-Electron-Mobility-Transistor (HEMT), 99% 1:2 boost efficiency at 100 kHz can be achieved. Low On-resistance, low charge and high speed are key in obtaining this high efficiency. GaN is also the solution in power supply circuitries such as Power Factor Correction (PFC) and LLC topologies. For the first time, bridgeless Totem-Pole PFCs are possible when using GaN transistors as the simplest solution (lowest component count).

Motion control

Transphorm is redefining electric power conversion, providing cost-competitive and easy-to-embed power conversion devices that reduce costly energy loss by more than 50% and simplify the design and manufacturing of motor drives. Gallium Nitride (GaN) High-Electron-Mobility-Transistor (HEMT) offers Low Qrr in Reverse Conduction Mode for high frequency, highly efficient motion control systems enabling simple hard-switched bridge operation while drastically decreasing switching losses and system size.

LED driver

To completely take advantage of LED efficiency, the LED driver need to be highly efficient as well as miniaturized. With the superior features of Transphorm’s Gallium Nitride (GaN) High-Electron-Mobility-Transistors (HEMT’s), both high efficiency and high frequency operation can be achieved, thereby making LED drivers (in the range of 100W to 500W) smaller, more efficient and reliable.

Electrical Vehicle (EV) charger

Using Transphorm Gallium Nitride (GaN) semiconductors to create electric vehicle chargers will make the system more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger helps improving the overall performance of the EV.

GaN semiconductors process electricity faster compared to silicon semiconductors used in conventional EV battery chargers. These high-speed semiconductors combined with lighter-weight electrical circuit components like inductors and capacitors decrease the overall weight and cost of the EV charger.

Photo-Voltaic (PV) inverters

Transphorm’s 600V Gallium Nitride (GaN) solutions enable smallest, fan-free residential PV inverters with record efficiency. Three times higher frequencies compared to silicon-based units can reduce the size of the solutions thanks to its smaller magnetics and heat sinks.

Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.

Company Overview

  • Company name: Transphorm Inc.
  • Foundation: 2007
  • Headquarter: Goleta, California in USA
  • Products:JEDEC-qualified GaN FETs (Field Effect Transistors), also called HEMT – High Electron Mobility Transistors
  • Company home page: www.transphormusa.com

Samples of our GaN products can be ordered at our webshop.

For larger quantities, please contact our sales offices directly.