Discrete (Diodes, Power MOSFETs, GaN)
Diodes
- Inroduction
- Products
- Supplier Profile
Discrete: Diodes
Shindengen is a leading company in diodes, offers Products for wide-ranging needs, from AC input section bridge diodes to secondary-side rectifier section high-speed diodes. Diodes are distinguished by their high durability, high reliability and ultra-low loss, thanks to the unique design, process and production technologies.
As KAGA FEI Europe, we are your reliable business partner, your value-added distributor for ShinDengen diodes.
General Rectifying Diodes
General rectifying diodes are high-voltage PN-junction rectifying elements. The chip structure stands out for its heat and humidity resistance, using own chemically and physically stable glass passivation. The voltage goes up to 800V and output currents range from 1A to 30A. Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.
Schottky Barrier Diodes
These diodes use the barriers created from the junction of metal and semiconductor. They make optimal high-speed, low-VF diodes, with lower forward startup voltage than a PN junction and extremely fast switching.Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.
Fast Recovery Diodes
These diodes use the barriers created from the junction of metal and semiconductor. They make optimal high-speed, low-VF diodes, with lower forward startup voltage than a PN junction and extremely fast switching.Have a look in the Shindengen Product Finder and contact us at Shindengen@eu.kagafei.com to get the quotation.
Company Overview
- Company name: Shindengen Electric Manufacturing Co., Ltd.
- Foundation: 1949
- Main Office: Ohtemachi, Chiyoda-ku, Tokyo, Japan
- Products: power semiconductors, power supply and car electronics products
- Company Homepage: http://www.shindengen.co.jp/top_e/index.html
Shindengen expansive product line of semiconductors includes general rectifier diodes used for switching power supplies, world-leading performance bridge diodes, MOSFETs and high-speed rectifier diodes. Shindengen also maintains a large market share in surge protection devices appropriate for induced-surge and over-voltage protection.
Power MOSFETs
- Introduction
- Products
- Supplier Profile
Discrete: Power MOSFETs
Shindengen’s experience as a power semiconductor manufacturer is utilized in their MOSFETs. Low input capacitance and high durability make them ideal for use in SMPS applications.
EETMOS® Series SMD (Surface Mount Device):
| Package | ID (A) | VDSS(V): 40 | VDSS(V): 50,55 | VDSS(V): 60 | VDSS(V): 100 | VDSS(V): 120150 |
|---|---|---|---|---|---|---|
| LA (SC-111BC Similar) | 13 | P13LA10EL | ||||
| FB (TO-252AA) | 20 | P20B12SN *N | ||||
| FB (TO-252AA) | 25 | P25B6EB | ||||
| FB (TO-252AA) | 26 | P26B10SL *N P26B10SN *N | ||||
| FB (TO-252AA) | 30 | P30B10EL | ||||
| FB (TO-252AA) | 60 | P60B4EL | P60B6EL P60B6EN P60B6SN *N | |||
| FE (SC-63) | 26 | P26FE10SLK *N | ||||
| FG | 32 | P32FG15SL | ||||
| FG | 80 | P80FG6EA | ||||
| FG | 85 | P85FG6EA P85FG6EAL | ||||
| FG | 90 | P90FG5R5SL | ||||
| FG | 94 | P94FG5R5SL | ||||
| FH (TO-263AB-1) | 80 | P80FH5ENK | ||||
| FH (TO-263AB-1) | 100 | P100FH4ENK | ||||
| FP | 126 | P126FP10SNK |
EETMOS® Series THD (Through Hole Device):
| Package | ID (A) | VDSS(V): 50 | VDSS(V): 60 | VDSS(V): 75 | VDSS(V): 100 | VDSS(V): 120 |
|---|---|---|---|---|---|---|
| FTO-220AG (SC-91) | 22 | P22F10SN *N | ||||
| FTO-220AG (SC-91) | 32 | P32F12SN *N | ||||
| FTO-220AG (SC-91) | 34 | P34F6EL | ||||
| FTO-220AG (SC-91) | 40 | P40F10SN *N | P40F12SN *N | |||
| FTO-220AG (SC-91) | 42 | P42F6EN | ||||
| FTO-220AG (SC-91) | 50 | P50F10SN *N | ||||
| FTO-220AG (SC-91) | 55 | P55F6EN | ||||
| FTO-220AG (SC-91) | 66 | P66F7R5SN *N | ||||
| FTO-220AG (SC-91) | 70 | P70F5EN | P70F7R5EN | |||
| FTO-220AG (SC-91) | 82 | P82F7R5SN *N | ||||
| FTO-220AG (SC-91) | 86 | P86F6SN *N | ||||
| FA (SC-46) | 100 | P100FA7R5EN *N |
Hi-PotMOS® Series SMD (Surface Mount Device):
| Package | ID (A) | VDSS(V): 250280300 | VDSS(V): 400 | VDSS(V): 500 | VDSS(V): 525 | VDSS(V): 600 |
|---|---|---|---|---|---|---|
| FB (TO-252AA) | 0.5 | P0R5B60HP2 | ||||
| FB (TO-252AA) | 1 | P1B52HP2 | ||||
| FB (TO-252AA) | 2 | P2B60HP2F *N | ||||
| FB (TO-252AA) | 2.5 | P2R5B52HP2F | ||||
| FB (TO-252AA) | *N | |||||
| FB (TO-252AA) | 3 | P3B28HP2 | ||||
| FB (TO-252AA) | 4 | P4B40HP2 | ||||
| FB (TO-252AA) | 5 | P5B52HP2 | ||||
| FB (TO-252AA) | 6 | P6B28HP2 | P6B40HP2 | P6B52HP2 | ||
| FB (TO-252AA) | 8 | P8B28HP2 P8B30HP2 *N | ||||
| FB (TO-252AA) | 9 | P9B40HP2 | ||||
| FB (TO-252AA) | 10 | P10B28HP2 | ||||
| FE (SC-63) | 2 | P2FE60VX5K *N | ||||
| FE (SC-63) | 6 | P6FE25VX5K *N | ||||
| FH (TO-263AB-1) | 7 | P7FH60HP2 *N | ||||
| FH (TO-263AB-1) | 15 | P15FH60HP2 *N | ||||
| FH (TO-263AB-1) | 20 | P20FH50HP2 *N | ||||
| FH (TO-263AB-1) | 36 | P36FH28HP2 *N |
Hi-PotMOS® Series THD (Through Hole Device):
| Package | ID (A) | VDSS(V): 280 | VDSS(V): 500 | VDSS(V): 600 |
|---|---|---|---|---|
| FTO-220AG (SC-91) | 3 | P3F60HP2 | ||
| FTO-220AG (SC-91) | 4 | P4F60HP2 | ||
| FTO-220AG (SC-91) | 5 | P5F50HP2 P5F50HP2F *N | P5F60HP2 | |
| FTO-220AG (SC-91) | 6 | P6F50HP2 | ||
| FTO-220AG (SC-91) | 7 | P7F60HP2 | ||
| FTO-220AG (SC-91) | 8 | P8F28HP2 | P8F50HP2 | |
| FTO-220AG (SC-91) | 10 | P10F50HP2 | P10F60HP2 | |
| FTO-220AG (SC-91) | 12 | P12F60HP2 | ||
| FTO-220AG (SC-91) | 13 | P13F28HP2 | P13F50HP2 | |
| FTO-220AG (SC-91) | 15 | P15F50HP2 | P15F60HP2 P15F60HP2F *N |
|
| FTO-220AG (SC-91) | 17 | P17F28HP2 | ||
| FTO-220AG (SC-91) | 20 | P20F50HP2 | ||
| FTO-220AG (SC-91) | 21 | P21F28HP2 | ||
| FTO-220AG (SC-91) | 26 | P26F28HP2 | ||
| FTO-220AG (SC-91) | 36 | P36F28HP2 | ||
| MTO-3P (TO-247AD) | 85 | P85W28HP2F *N |
*EETMOS® and Hi-PotMOS® are registered trademarks of Shindengen.
*N: New
Datasheets are available on demand. Please contact us for more information at Shindengen@eu.kagafei.com
Company Overview
- Company name: Shindengen Electric Manufacturing Co., Ltd.
- Foundation: 1949
- Main Office: Ohtemachi, Chiyoda-ku, Tokyo, Japan
- Products: power semiconductors, power supply and car electronics products
- Company Homepage: http://www.shindengen.co.jp/top_e/index.html
Shindengen expansive product line of semiconductors includes general rectifier diodes used for switching power supplies, world-leading performance bridge diodes, MOSFETs and high-speed rectifier diodes. Shindengen also maintains a large market share in surge protection devices appropriate for induced-surge and over-voltage protection.
GaN
- Introduction
- Products
- Technology
- Applications
- Supplier Profile
Discrete: GaN
Over the last several years, GaN (Gallium Nitride) semiconductors have emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems – ranging from ultra-small adapters, high-power-density PCs, server and telecom power supplies, to highly efficient PV inverters and motion control systems.
From material technology and device fabrication to circuit design and package assembly, Transphorm designs and delivers its power conversion devices to meet the needs of global customers, helping them scale quickly and save money. By creating an ecosystem of electrical systems manufacturers powered by Transphorm, the company accelerates the adoption of application-specific power modules and paves the way for the next generation of electrical systems designed for optimal efficiency.
Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.
GaN Products
Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.
HEMTs (High Electron Mobility Transistors)
| Part Number | Vds (V) min | Rds(on) (mΩ) typ | Rds(on) (mΩ) max | Id (25°C) (A) max | Package | Package Variation |
|---|---|---|---|---|---|---|
| TP65H015G5WS | 650 | 15 | 18 | 95 | TO-247 | Source |
| TP65H035G4WS | 650 | 35 | 41 | 46.5 | TO-247 | Source |
| TP65H035G4WSQA | 650 | 35 | 41 | 46.5 | TO-247 | Source |
| TP65H035WS | 650 | 35 | 41 | 46.5 | TO-247 | Source |
| TP65H035WSQA | 650 | 35 | 41 | 47 | TO-247 | Source |
| TP65H050G4WS | 650 | 50 | 60 | 34 | TO-247 | Source |
| TP65H050G4BS | 650 | 50 | 60 | 34 | TO-263 | Source |
| TP65H050WSQA | 650 | 50 | 60 | 36 | TO-247 | Source |
| TP65H050WS | 650 | 50 | 60 | 36 | TO-247 | Source |
| TP65H070LSG | 650 | 72 | 85 | 25 | PQFN88 | Source |
| TP65H070LDG | 650 | 72 | 85 | 25 | PQFN88 | Drain |
| TP65H150G4PS | 650 | 150 | 180 | 16 | TO-220 | Source |
| TP65H150G4LSG | 650 | 150 | 180 | 16 | PQFN88 | Source |
| TP65H150BG4JSG | 650 | 150 | 180 | 16 | PQFN88 | Source |
| TP65H300G4LSG | 650 | 240 | 312 | 6.5 | PQFN88 | Source |
| TP65H480G4JSG | 650 | 480 | 560 | 3.6 | PQFN56 | Source |
| TP90H050WS | 900 | 50 | 63 | 34 | TO-247 | Source |
Sampling
| Part Number | Vds (V) min | Rds(on) (mΩ) typ | Rds(on) (mΩ) max | Id (25°C) (A) max | Package | Package Variation |
|---|---|---|---|---|---|---|
| TP65H035G4QS | 650 | 35 | 41 | 46.5 | TOLL | Source |
| TP65H050G4QS | 650 | 50 | 60 | 34 | TOLL | Source |
| TP65H070G4LSGB | 650 | 72 | 85 | 29 | PQFN88 | Source |
| TP65H070G4PS | 650 | 72 | 85 | 29 | TO-220 | Source |
| TP65H150G4LSGB | 650 | 150 | 180 | 16 | PQFN88 | Source |
| TP65H300G4JSGB | 650 | 240 | 312 | 6.5 | PQFN56 | Source |
| TP65H300G4LSGB | 650 | 240 | 312 | 6.5 | PQFN88 | Source |
| TP65H480G4JSGB | 650 | 480 | 560 | 3.6 | PQFN56 | Source |
Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.
Technology
Normally-off/Cascode – Normally-off devices are considered safer than normally-on devices. Transphorm pairs it’s normally-on, high-voltage GaN FET with a normally-off, low-voltage Si MOSFET. This creates a hybrid device that is normally-off but still compatible with Si drivers for added ease of use. This results in an overall fast-switching device with low conduction, switching and output losses. One important advantage of a Cascode switch is that no special driver is required.
|
VGS for fully on (V) |
Max. VGS rating (V) |
Safety Margin (V) |
|
| Transphorm Cascode |
5 |
18 |
13 |
| E-mode A |
7 |
10 |
3 |
| E-mode B |
6 |
8 |
2 |
| E-mode C |
5 |
6 |
1 |
GaN has changed the world with high brightness LEDs and high power RF devices and now it expands to power applications. GaN offers higher performance and GaN epitaxial material is scalable to 6inch and 8inch Silicon substrates for a low cost platform.
Due to the extremely high mobility of GaN material, the technology lends itself to operate at higher switching frequencies and higher speeds leading to smaller size and lower weight power converter solutions. This in turn allows for smaller inductors, transformers, capacitors, heat sinks, PCBs and boxes/enclosures. Combined with increased efficiency end lower power losses results in a higher performance and cost reduced system compared to Silicon solutions.
Power supplies
High-density power supplies for PCs, servers and telecom equipment in the 200W to 5000W power range are addressed by compact power supplies and adapters utilizing Transphorm’s Gallium Nitride (GaN) devices. With Transphorm GaN-on-Silicon High-Electron-Mobility-Transistor (HEMT), 99% 1:2 boost efficiency at 100 kHz can be achieved. Low On-resistance, low charge and high speed are key in obtaining this high efficiency. GaN is also the solution in power supply circuitries such as Power Factor Correction (PFC) and LLC topologies. For the first time, bridgeless Totem-Pole PFCs are possible when using GaN transistors as the simplest solution (lowest component count).
Motion control
Transphorm is redefining electric power conversion, providing cost-competitive and easy-to-embed power conversion devices that reduce costly energy loss by more than 50% and simplify the design and manufacturing of motor drives. Gallium Nitride (GaN) High-Electron-Mobility-Transistor (HEMT) offers Low Qrr in Reverse Conduction Mode for high frequency, highly efficient motion control systems enabling simple hard-switched bridge operation while drastically decreasing switching losses and system size.
LED driver
To completely take advantage of LED efficiency, the LED driver need to be highly efficient as well as miniaturized. With the superior features of Transphorm’s Gallium Nitride (GaN) High-Electron-Mobility-Transistors (HEMT’s), both high efficiency and high frequency operation can be achieved, thereby making LED drivers (in the range of 100W to 500W) smaller, more efficient and reliable.
Electrical Vehicle (EV) charger
Using Transphorm Gallium Nitride (GaN) semiconductors to create electric vehicle chargers will make the system more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger helps improving the overall performance of the EV.
GaN semiconductors process electricity faster compared to silicon semiconductors used in conventional EV battery chargers. These high-speed semiconductors combined with lighter-weight electrical circuit components like inductors and capacitors decrease the overall weight and cost of the EV charger.
Photo-Voltaic (PV) inverters
Transphorm’s 600V Gallium Nitride (GaN) solutions enable smallest, fan-free residential PV inverters with record efficiency. Three times higher frequencies compared to silicon-based units can reduce the size of the solutions thanks to its smaller magnetics and heat sinks.
Samples of our GaN products can be ordered at our webshop. For larger quantities, please contact our sales offices directly.
Company Overview
- Company name: Transphorm Inc.
- Foundation: 2007
- Headquarter: Goleta, California in USA
- Products:JEDEC-qualified GaN FETs (Field Effect Transistors), also called HEMT – High Electron Mobility Transistors
- Company home page: www.transphormusa.com
Samples of our GaN products can be ordered at our webshop.
For larger quantities, please contact our sales offices directly.