• Introduction
  • Standalone
  • RFID
  • Authentification
  • Technology
  • Benefits
  • Supplier Profile

FRAM (Ferroelectric Random Access Memory)

Build better products with Fujitsu’s superior non-volatile memory solutions

FRAM is a unique memory solution that combines the best features of RAM and ROM. It significantly outperforms existing non-volatile memories like E2PROM and Flash by offering fast random writing access, high write cycle endurance and low power consumption. FRAM technology functions by utilizing ferroelectric material in the memory cells. Its outstanding features enable significant performance improvements, frequent data updates and last data backup at sudden power outage for customer applications.

Fujitsu began mass-producing FRAM technology in 1999 and was the first company to manage high volume production of this memory technology. Since this time Fujitsu have shipped a large number of FRAM products worldwide, and have gained more experience in FRAM manufacturing than any other company.

Read the latest FRAM product news under News


A large portfolio of FRAM Standalone products are available here, ranging from a density of 4Kbit to 8Mbit, covering parallel and serial interfaces as well as diverse voltage ranges and temperature ranges.

Products for both industrial and automotive segments are available, ensured with Fujitsu’s long term support.

Read more in our FRAM Standalone factsheet

Portfolio Overview

Standalone FRAM Product Line-up

Buy here some samples

Parallel Interface:

Part NumberMemory DensityPower Supply VoltageOperating Frequency (MAX)Operating TemperatureRead/Write CycleData Retention GuaranteePackage
MB85R8M2T (1v0)8Mbit (512Kx16bit)1.8 to 3.6V150ns-40 to +85°C10 trillion times10yrs (+85°C)FBGA-48
MB85R4M2T (5v0)4Mbit (256Kx16bit)1.8 to 3.6V150ns-40 to +85°C10 trillion times10yrs (+85°C)TSOP-44
MB85R4001A (5v1)4Mbit (512Kx8bit)3.0 to 3.6V150ns-40 to +85°C10 billion times10yrs (+55°C)TSOP-48
MB85R4002A (5v1)4Mbit (256Kx16bit)3.0 to 3.6V150ns-40 to +85°C10 billion times10yrs (+55°C)TSOP-48
MB85R1001A (5v1)1Mbit (128Kx8bit)3.0 to 3.6V150ns-40 to +85°C10 billion times10yrs (+55°C)TSOP-48
MB85R1002A (5v1)1Mbit (64Kx16bit)3.0 to 3.6V150ns-40 to +85°C10 billion times10yrs (+55°C)TSOP-48
MB85R256F (8v4)256Kbit (32Kx8bit)2.7 to 3.6V150ns-40 to +85°C1 trillion times10yrs (+85°C)TSOP-28, SOP-28

Serial Interface (SPI)

Part NumberMemory DensityPower Supply VoltageOperating Frequency (MAX)Operating TemperatureRead/Write CycleData Retention GuaranteePackage
(AEC-Q100) (1v0)

MB85RS4MTY (Industrial) (0v1)
4Mbit (512Kx8bit)1.8 to 3.6V50MHz-40 to +125°C10 trillion times10yrs (+85°C)SOP-8 (208mil), DFN-8
(AEC-Q100) (1v0)

MB85RS4MLY (Industrial) (0v1)
4Mbit (512Kx8bit)1.7 to 1.95V50MHz-40 to +125°C10 trillion times10yrs (+85°C)SOP-8 (208mil), DFN-8
MB85RS4MT (1v0)4Mbit (256Kx16bit)1.8 to 3.6V40MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8 (209mil)
MB85RQ4ML (3v2)4Mbit (256Kx16bit)1.7 to 1.95V108MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-16
(AEC-Q100) (1v1)

MB85RS2MTY (Industrial) (1v0)
2Mbit1.8 to 3.6V50MHz-40 to +125°C10 trillion times10yrs (+85°C)SOP-8; DFN-8
(AEC-Q100) (0v1)

MB85RS2MLY (Industrial) (1v0)
2Mbit1.7 to 1.95V50MHz-40 to +125°C10 trillion times10yrs (+85°C)SOP-8, DFN-8
MB85RS2MTA (4v1)2Mbit1.7 to 3.6V 40MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8
MB85RS2MT (5v0)2Mbit1.8 to 3.6V 25MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8, DIP-8
MB85RS1MT (7v1) (DFN/SOP)1Mbit1.8 to 2.7V
2.7 to 3.6V
-40 to +85°C10 trillion times10yrs (+85°C)SOP-8, DFN-8
(1.7V, WLP) (1v0)
1Mbit1.7 to 2.7V
2.7 to 3.6V
-40 to +85°C10 trillion times10yrs (+85°C)WLCSP-8
MB85RS512T (3v0)512Kbit1.8 to 2.7V
2.7 to 3.6V
-40 to +85°C10 trillion times10yrs (+85°C)SOP-8
(AEC-Q100) (6v3)
256Kbit1.8 to 3.6V40MHz-40 to +125°C10 trillion times40years (+85°C)SOP-8
MB85RS256TY (Industrial) (2v2)256Kbit1.8 to 3.6V33MHz-40 to +125°C10 trillion times40years (+85°C) SOP-8
MB85RS256B (4v)256Kbit2.7 to 3.6V33MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
(AEC-Q100) (6v1)
128Kbit1.8 to 3.6V40MHz-40 to +125°C10 trillion times40years (+85°C)SOP-8
MB85RS128TY (Industrial) (2v1)128Kbit1.8 to 3.6V33MHz-40 to +125°C10 trillion times40years (+85°C)SOP-8
MB85RS128B (4v0)128Kbit2.7 to 3.6V33MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RS64TU (2v0)64Kbit1.8 to 3.6V10MHz-55 to +85°C10 trillion times10yrs (+85°C)SOP-8, SON-8
MB85RS64T (2v0)64Kbit1.8 to 3.6V10MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8, SON-8
MB85RS64T (1.7V)64Kbit1.7 to 3.6V10MHz-40 to +85°C10 trillion times40yrs (+85°C)SOP-8
(AEC-Q100) (1v1)
64Kbit2.7 to 5.5V2.7V-4.5V: 25MHz, 4.5V-5.5V: 33MHz-40 to +125°C10 trillion times70yrs (+85°C)SOP-8
MB85RS64VY (Industrial) (1v1)64Kbit2.7 to 5.5V2.7V-4.5V: 25MHz, 4.5V-5.5V: 33MHz-40 to +125°C10 trillion times70yrs (+85°C)SOP-8, SON-8
MB85RS64V (5v0)64Kbit3.0 to 5.5V20MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RS64 (6v0)64Kbit2.7 to 3.6V20MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RS16 (8v0)16Kbit2.7 to 3.6V20MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RS16N (3v1)16Kbit2.7 to 3.6V20MHz-40 to +95°C1 trillion times (@85°C), 10 billions times (@95°C)10yrs (+95°C)SOP-8, SON-8
MB85RDP16LX (1v1)16Kbit1.65 to 1.95V15MHz-40 to +105°C10 trillion times10yrs (+105°C)SON-8

Serial Interface (I²C):

Part NumberMemory DensityPower Supply VoltageOperating Frequency (MAX)Operating TemperatureRead/Write CycleData Retention GuaranteePackage
MB85RC1MT (4v0)1Mbit1.8 to 3.6V3.4MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8
MB85RC512T (5v0)512Kbit1.7 to 3.6V3.4MHz-40 to +85°C10 trillion times10yrs (+85°C)SOP-8
MB85RC256V (7v0)256Kbit2.7 to 5.5V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RC128A (4v0)128Kbit2.7 to 3.6V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RC64TA (3v2)64Kbit1.8 to 3.6V3.4MHz-40 to +105°C10 trillion times10yrs (+105°C)SOP-8, SON-8
MB85RC64A (4v0)64Kbit2.7 to 3.6V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RC64V (7v0)64Kbit3.0 to 5.5V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RC16 (11v0)16Kbit2.7 to 3.6V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8, SON-8
MB85RC16V (9v0)16Kbit3.0 to 5.5V1MHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8
MB85RC04V (4v0)4Kbit
3.0 to 5.5V1MHz-40 to +85°C1 trillion times10yrs(+85°C)SOP-8
MB85RC04 (1v0)4Kbit
2.7 to 3.6V400KHz-40 to +85°C1 trillion times10yrs (+85°C)SOP-8

Buy here some samples


  •  Metering
  •  Industrial and measurement instruments
  •  Factory Automation
  •  IoT / Wearable
  •  Automotive
  •  Medical
  • Consumer


With all the benefits FRAM provides, it is possible to build RFID (Radio Frequency Identity chip Memories) tags with features that no EEPROM based RFID tag can offer. The high writing speed allows to build RFID tags with much higher capacities than with EEPROM. Since tags are usually mounted on moving objects, there is a pain barrier how long a write access can last. With FRAM it is possible to come very close to the theoretical maximum that the RFID wireless protocols offer.

Also it is possible to equip much faster moving targets with RFID by using FRAM based tags. With the high endurance, frequently used tags don’t have to be replaced regularly when the memory wears out. It is almost impossible to reach the endurance limit of an FRAM based tag.

Fujitsu’s FRAM memory is available for HF (13.56MHz) and UHF (860MHz-960MHz) applications. The large-density memory is perfect for RFID use in factory-automation, maintenance, asset-management, and logistic-tracking applications.

Because data storage in the FRAM technology is not based on charges but on polarization of the ferroelectric film, it shows a better data stability in medical, pharmaceutical, biomedical, food and cosmetic industries than other non-volatile memory technologies.

FRAM RFID Product Line-up

Part NumberRadio frequency rangeMemory capacityCommandsInterfaceData retentionRead/Write endurance
MB97R8120UHF 860-960MHz8KByteISO/IEC18000-6C 
EPC C1G2 Ver.1.2.0
-10years (+85°C)10 13 times
MB97R8130UHF 860-960MHz8KByteISO/IEC18000-6C 
EPC C1G2 Ver.1.2.0
SPI10years (+85°C)10 13 times
MB97R8110UHF 860-960MHz8KByteISO/IEC18000-6C 
EPC C1G2 Ver.1.2.0
SPI, GPIO, Keyscan10years (+85°C)10 13 times
MB97R8050UHF 860-960MHzNo user memoryISO/IEC18000-6C 
EPC C1G2 Ver.1.2.0
-10years (+55°C)10 10 times
MB89R118CHF 13.56MHz2KBytesISO/IEC15693-10years (+85°C)10 12 times
MB89R119BHF 13.56MHz256BytesISO/IEC15693-10years (+85°C)10 12 times
MB89R112HF 13.56MHz9KBytesISO/IEC15693SPI10years (+85°C)10 12 times

FRAM RFID Features

  • Compliant with EPCglobal Class 1 Generation 2
  • Carrier frequency: 860 MHz – 928 MHz
  • Data rate:
    • 7 kbps – 128kbps (RW->Tag)
    • 40 kbps – 640 kbps
  • External Power supply by RF (3.0V, 600µA @ +6dBm)
  • SPI interface
    • SPI slave interface to access memory
    • SPI master interface to control SPI peripheral device
  • High speed read/write non-volatile memory (FRAM)
    • USR bank size: 61.440 bits
    • EPC bank size: up to 480bits
    • Block Permalock (write protection in unites of 512 words)
    • Read/Write Endurance: 1013 times
    • Memory data retention: 10 years (+85°C)
  • Key-Scan circuit

FRAM RFID Memories Applications


Total Traceability

Traceability is becoming more and more important in the medical market. Because of its robust characteristics, FRAM RFID can be attached to products right after production and and store all necessary data through the whole product life, from production to logistics, warehousing, use and disposal. This gapless traceability is important to the medical, pharmaceutical, and biomedical industries, which continually seek to improve the safety and reliability of medical products.

Traceability of Medical Products

FRAM RFID enables complete visibility during all stages of the process, reducing the likelihood that counterfeited products will reach the market. Unlike conventional RFID tags, FRAM RFID tags can be placed on medical or pharmaceutical products at the production stage. After shipment, RFID tags can record the logistical history as well. And, when connected with sensors, FRAM RFID can record the environmental history (such as temperature and physical stress). Because of the large available memory sizes that FRAM RFID devices provide, much more information can be stored than in competitive products.

Application Example

For example, FRAM RFID is expected to improve safety and efficiency in hospitals. FRAM RFID can track supplies of medicine, helping assure that the right quantity is in stock, and that expired medications are detected and discarded. FRAM RFID can also help monitor the number of surgical tools before and after operations.


Complete Visibility of Production and Real-Time Operations

Because of its large density memory and fast writing speed, FRAM RFID is ideal for factory automation applications that require frequent data logging and operational efficiency. FRAM RFID is also appropriate for maintenance applications that require real-time operation and on-site confirmation of maintenance history and parts information.

Factory Automation

The Fujitsu FRAM RFID tags can improve production management in factories because the tags can store a lot of information, and can be written quickly and frequently. The tags can record such information as production and inspection histories, customized parts, operation information, and manuals. This type of off-line data management improves the flexibility of the production line, and shortens production lead times.

Maintenance Operations

Because FRAM RFID tags have such large memories and fast writing speed, they are appropriate for a variety of maintenance applications, from those in the electrical, construction, infrastructure, and transportation industries to applications in the rental-machinery, facilities-management (gas, water, chemicals, and oil), FA and aviation industries.

Application Example: Aviation

For example, Fujitsu’s 64kByte FRAM RFID has been selected for use in Boeing’s maintenance operation. The RFID tags will keep track of the maintenance history, manuals, parts information, and other data for the many components of an aircraft. This RFID solution is expected to increase the accuracy, cut the turnaround time, and improve the safety and efficiency of Boeing’s maintenance operations.

Energy Harvesting

RFID is a passive technology that usually harvests energy from the electromagnetic field generated by the reader/writer device and uses this energy for the internal electric circuit. An analog front-end in the RFID IC converts the electromagnetic field into a voltage that is sufficient to supply energy for the memory access and to provide an answer back to the RFID reader/writer device.

rfid 1

If additional components need to be connected to the RFID system, there is the possibility to use a dual-interface product and access the FRAM memory through a serial SPI interface. Usually this access is performed by a microcontroller which has to be supplied with power from e.g. a battery. Same with other components that might be connected to the microcontroller like a sensor or a display.

rfid 2Considering the fact that in the above example the microcontroller is only used to communicate with the single components, it can be replaced if another SPI master device is used. Since the new UHF RFID product MB97R8110 has an SPI master port embedded, it is not necessary to use an MCU but instead the MB97R8110 can be used as bridge between the RFID reader/writer device and the connected peripheral component. Also, the MB97R8110 has the ability to output a power supply to connected devices to avoid using a battery to enable battery-less systems.

rfid 3With this solution, cost-efficient UHF based RFID can be realized without having to use a battery. For example:

  • Sensor applications
  • E-Ink displays
  • Keyboards
  • Remote controls
  • LED controls

Memories Authentification

FRAM authentificationFujitsu offers below FRAM based authentication solutions by utilizing ferroelectric process and silicon gate CMOS process technologies. Such an authentication solution can be used to detect unauthorized cloned peripherals and accessories used in electric equipment. The authentication is realized by Challenge and Response between the host and the peripheral.

MB94R330 adopts an original communication protocol based on the two-wire serial interface (I²C BUS), a hardware cryptographic macro and a proprietary control core.






FRAM Memories Technology

FRAM is a type of non-volatile RAM that utilizes a ferroelectric film as a capacitor to store data. In contrast to the conventional non-volatile memories like Flash and E²PROM, the content of an FRAM cell is not stored in the form of charge carriers in a ‘floating gate’. The information – logically 0 or 1 – is contained in the polarization of the ferroelectric material lead zirconate titanate, PZT (Pb(ZrTi)O3). This material is placed between two electrodes in the form of a thin film, in a similar way as the structure of a capacitor.

picture of the structure

By generating an electric field between the two electrodes, the ferroelectric film will be polarized. Because the polarization remains even after the electric field is removed, the content of the FRAM can be maintained even in absence of power. This non-volatility represents the major advantage of FRAM compared to DRAM.



What are the FRAM Memories benefits?


The non-volatility of FRAM allows the data to be maintained even in the absence of power. As a result, backup battery becomes redundant.

Fast Writing
FRAM is 30,000 times faster than E²PROM in write access. Since FRAM operates based on overwrite in random access, there is no waiting time for erase necessary. As a result, FRAM can complete the write process even at sudden power outage, thus ensure data integrity.

High Endurance
FRAM provides up to 10 million times higher endurance over E²PROM. With over 10 trillion write/read cycles (1013), FRAM memory has a virtually unlimited read/write endurance. Based on that, customer can realize direct data storage into FRAM, instead of transferring data from RAM to ROM. A real-time logging can be easily realized with a simple memory architecture, no wear-leveling is necessary.

Low Power
FRAM consumes significantly lower energy in writing than E²PROM or Flash. Since no large charge quantities have to be displaced within FRAM’s operation, charge pumps, which are usually used to generate higher programming voltages, are not necessary with FRAM. Also the extremely short access cycle results in considerably lower energy consumption.

As a result, FRAM technology is much more energy efficient than Flash or E²PROM.

FRAM benefits

Company overview


Fujitsu Semiconductor ensures a consistent high reliability of FRAM products through evaluating Test Element Group (TEG) and products, especially in respect of data retention and fatigue characteristics.

Please find more information on FRAM Quality and Reliability


  • Introduction
  • Products
  • Supplier Profile

ReRAM (Resistive Random Access Memories)

It´s a non-volatile memory technology featuring lowest power consumption in reading access while allowing random writing access. Based on this technology, considerable changes in resistance of the circuit can be created by applying a pulse voltage to a metal oxide thin film. And this change of resistance can be recorded as ones and zeros. This brand new memory technology is optimal for IoT, wearable devices and hearing aids applications.

ReRAM Portfolio

Visit our Webshop to buy this part.

Part numberMemory DensityInterfacePower Supply VoltageOperating FrequencyOperating TemperatureRead Current (typ)Read CyclePackage
MB85AS4MT4MbitSPI1,65 - 3,6V5MHz-40 to +85°C0.2mAUnlimitedSOP-8
MB85AS8MT (2v0)8Mbit SPI
1,6 – 3,6V 10MHz -40 to +85°C 0.15mA Unlimited SOP-8, WLCSP-11

Read the latest ReRAM product news in our news page

Company overview

  • Foundation: 2008
  • Headquarter: Shin-Yokohama, Kanagawa, Japan
  • Products: System Memory (FRAM)
  • Company home page: